| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device that prevents the occurrence of a leakage current while improving a current drive capability, and to provide its manufacturing method. <P>SOLUTION: A first gate electrode constituting a first n-channel transistor and a first p-channel transistor is extended so as to be connected to a second p-type source/drain. A second gate electrode constituting a second n-channel transistor and a second p-channel transistor is extended so as to be connected to a first p-type source/drain. A level difference between the upper face of the first gate electrode in a region connected with the second p-type source/drain and the surface of the second p-type source/drain is lower than that of between the upper face of the first gate electrode in the first n-channel transistor and the surface of the first n-type source/drain. A level difference between the upper face of the second gate electrode in a region connected with the first p-type source/drain and the surface of the first p-type source/drain is lower than that of between the upper face of the second gate electrode in the second n-channel transistor and the surface of the second n-type source/drain. <P>COPYRIGHT: (C)2008,JPO&INPIT |
