| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor film which can improve productivity by using a plurality of irradiation optical systems and suppress influence of variation in intensity of a laser beam. <P>SOLUTION: A substrate 10 is divided into three single regions 11A, 11B, 11C and boundary regions 12AB, 12BC. The single regions 11A, 11B, 11C are each irradiated with a laser beam from different irradiation optical systems. The boundary regions 12AB is irradiated with a laser beam from irradiation optical systems of both the single regions 11A, 11B. The boundary region 12BC is irradiated with a laser beam from irradiation optical systems of both the single regions 11B, 11C. The difference in crystal grain size due to variation in the intensity of the laser beam can be relaxed while shortening a scanning time. The boundary regions 12AB, 12BC each have an arrangement in which a parallel line pattern used for emitting a laser beam from one irradiating optical system is mixed with a parallel line pattern used for emitting a laser beam from the other irradiation optical system. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
