| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the design load on a channel stopper, and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device comprises a first-conductive semiconductor substrate, having prescribed concentration, a second-conductive region formed on the semiconductor substrate; a first-conductive depletion layer stop region that has concentration higher than the prescribed concentration for preventing the depletion layer extended from the region from spreading; and a protective film for preventing the second conductivity-type impurity from being injected to the depletion layer stop region. In the semiconductor device, the depletion layer stop region is formed continuously, starting from the edge of the semiconductor substrate to a prescribed position, and the protective film is formed continuously on the depletion layer stop region that is to be formed continuously. COPYRIGHT: (C)2008,JPO&INPIT
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