| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum semiconductor device having a quantum dot proximity laminate structure which actualizes a high uniformity and light emission characteristics. SOLUTION: The quantum semiconductor device comprises a first quantum dot (13), a semiconductor crystal layer (15) which covers the first quantum dot, a nano hole (16) positioned directly above the first quantum dot in the semiconductor crystal layer, and a second quantum dot (18) positioned above the nano hole. COPYRIGHT: (C)2008,JPO&INPIT |
