| 摘要 |
<p>A semiconductor device for measuring an overlay error, a method for measuring an overlay error, a lithographic apparatus, and a device manufacturing method are provided to measure accurately the overlay error by improving a structure thereof. A semiconductor device is formed to determine an overlay error on a semiconductor substrate(100). The semiconductor device includes a first and second transistors(T1,T2). The first transistor includes a first and second diffusion regions(A1,A2) coupled with a first gate(G1). The second transistor includes a third and fourth diffusion regions(A3,A4) coupled with a second gate(G2). Each of the first and second gates has a non-uniform shape. The second gate is oriented to an orientation of the first gate so that an influence of an overlay error on a device parameter of the second transistor has an opposite sign in comparison with an influence of the overlay error on a corresponding device parameter of the first transistor.</p> |
