| 摘要 |
A substrate processing apparatus and a method for manufacturing semiconductor device can inhibit an elastic deformation of a substrate due to a temperature difference in a substrate surface during a substrate temperature raising process so that a substrate processing such as a film formation and the like can be performed in a temperature uniform state in a substrate surface. The substrate processing apparatus is adapted to heat a substrate 1 on a susceptor 2 by a division type resistance heating heater 3 which can perform an unequal heating in a substrate surface. Such a temperature deviation Deltat in a substrate surface represented by: Deltat<=350xEXP(-0.004xT), wherein T is a substrate temperature, is obtained that no warpage of the substrate 1 occurs in accordance with a temperature of the substrate 1 when heating. Heating of the substrate 1 is controlled by controlling the resistance heating heater 3 such that the temperature deviation in a surface of the substrate 1 heated by the resistance heating heater 3 is maintained within the above-noted Deltat.
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