发明名称 |
X-Y address type solid state image pickup device and method of producing the same |
摘要 |
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
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申请公布号 |
US2005029561(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040940553 |
申请日期 |
2004.09.14 |
申请人 |
SUZUKI RYOJI;MABUCHI KEIJI;MORI TOMONORI |
发明人 |
SUZUKI RYOJI;MABUCHI KEIJI;MORI TOMONORI |
分类号 |
H01L27/146;H01L27/01;H01L27/15;H01L31/0216;H01L31/0232;H01L31/062;H01L31/10;H04N5/335;H04N5/374;(IPC1-7):H01L31/062 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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