A plasma etching apparatus is provided to effectively remove impurities generated in an etching process to increase an etching efficiency. A plasma etching apparatus includes a chamber(100). First and second electrodes(110,120) are installed in the chamber for the first electrode to face the second electrode. A gas supplying unit(130) supplies gas into the chamber. A plasma discharging unit(200) is protrusively formed at a lower portion of the chamber to exhaust plasma generated between the first electrode and the second electrode. A gas discharging unit(400) is formed at a position adjacent to the plasma discharging unit. The gas discharging unit discharge various impurities generated by an etching process to an external. The gas discharging unit has an absorbing pipe of a slit shape absorbing various impurities. The gas discharging unit discharge the impurities absorbed into the absorbing pipe to the external through a pipe.
