| 摘要 |
<p>A method for manufacturing a phase shift mask of a semiconductor device is provided to widen and planarize a boundary region between a contact and a contact of photoresist layer patterns and to reduce a bridge between the contacts. A first light shielding material is formed on an upper part of a quartz substrate in order to prevent the transmission of light. A light shielding pattern(102a) is formed by removing a predetermined region of the first light shielding material. A second light shielding material(103) is formed on a residual region except for an open region and the light shielding pattern of the entire structure by using a mask. The mask is removed therefrom. The second light shielding material is planarized to expose the light shielding pattern. The first light shielding material having a thickness of 100-500nm is formed by a chemical vapor deposition method or a sputtering method using Cr.</p> |
