| 摘要 |
<p>A method for manufacturing a semiconductor device using a KrF light source is provided to make the semiconductor device of a 100 nm or less, using the KrF light source, without using an ArF light source requiring use of expensive equipment and a specific photoresist material. An oxide layer(20) is formed on a semiconductor substrate(10), and then a gate conductor(30) is formed on the oxide layer. An anti-reflective layer is formed on the gate conductor, and then a photoresist layer is formed on the anti-reflective layer. A photolithography process is performed on the photoresist layer to form a first photoresist layer pattern(50b) having a first line width. The anti-reflective layer is etched using the first photoresist layer pattern as a mask to form an anti-reflective layer pattern(40a), and simultaneously the first photoresist layer pattern is laterally etched to form a second photoresist layer pattern having a second line width corresponding to a final design value for the gate conductor. The gate conductor and the oxide layer are etched using the second photoresist layer pattern and the anti-reflective layer pattern as a mask to form a gate conductor pattern and an oxide layer pattern.</p> |
