| 摘要 |
A nitride light emitting diode and a manufacturing method thereof are provided to increase an optical efficiency by effectively transmit an electric charge to be implanted in a light emitting element to an active layer. A nitride light emitting diode includes a first conductive semiconductor layer(20), an active layer(30) positioned on the first conductive semiconductor layer, and a second conductive semiconductor layer(40) formed on the active layer. The second conductive semiconductor layer contains a dopant selected from the group consisting of Mg, Zn, Si, Be, and O. The second semiconductor layer is a p-type semiconductor layer. A content of the Mg is more than that of the dopant selected from Zn, Si, Be, and O.
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