| 摘要 |
The present invention is to provide an electron-beam lithography method and an electron-beam lithography apparatus that can draw patterns with a high precision despite a change in barometric pressure, can ensure a satisfactory throughput, and are inexpensive. In the electron-beam lithography method that uses an electron beam to draw patterns on a sample, a difference between a current measured barometric pressure and a previous measured barometric pressure, and an elapsed time between their barometric pressure-measurement points in time are determined. When the rate of the difference of their barometric pressures with respect to the elapsed time is equal to or larger than a prescribed barometric pressure change rate value, a drawing precision is calibrated.
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