METHOD OF FABRICATING EMBEDDED FLASH MEMORY DEVICE
摘要
<p>A method for manufacturing an embedded flash memory device is provided to enhance the reliability of the embedded flash memory device by preventing deterioration of logic conformity in a logic region. A first region and a second region are defined on a semiconductor substrate(110). A floating gate structure is formed to interpose a first gate insulating layer pattern(114a) into the first region. A second gate insulating layer(125) is formed on the semiconductor substrate of the first region and the second region including the floating gate structure. A well is formed within the semiconductor substrate of the second region including the second gate insulating layer. The first and the second region correspond to a flash memory cell region and a logic region. The logic region includes a low voltage region and a high voltage region. The second gate insulating layer of the high voltage region is thicker than a first gate insulating layer pattern.</p>
申请公布号
KR100812237(B1)
申请公布日期
2008.03.10
申请号
KR20060081082
申请日期
2006.08.25
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
MOON, JUNG HO;KWON, CHUL SOON;YU, JAE MIN;JEONG, YOUNG CHEON;YOON, IN GU;LIM, BYEONG CHEOL