| 摘要 |
PURPOSE: A method for fabricating a pattern of a semiconductor device is provided to prevent a void in a filling process and increase a process margin by forming a buffer layer on a conductive layer such that the buffer layer is composed of a nitride layer and an oxide layer that have high etch selectivity and by etching the conductive layer while using the buffer layer as a mask. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate. The conductive layer is formed on the interlayer dielectric. The buffer layer composed of a dual layer of the nitride layer and the oxide layer is formed on the conductive layer. The buffer layer is etched to form a hard mask pattern through a reactive ion etch plasma source process or oxygen plasma descum process while using a conductive interconnection mask. The conductive layer is etched to form a conductive layer pattern having an inclined profile through a magnetic enhancement reactive ion etching(MERIE) process while using a hard mask. |
