发明名称 |
DEVICES FOR PROGRAMMING A MEMORY |
摘要 |
A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device. ® KIPO & WIPO 2008
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申请公布号 |
KR20080021649(A) |
申请公布日期 |
2008.03.07 |
申请号 |
KR20077028807 |
申请日期 |
2007.12.10 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
NGUYEN DZUNG H.;LOUIE BENJAMIN;NAZARIAN HAGOP A.;YIP AARON;HAN, JIN MAN |
分类号 |
G11C16/12;G11C16/10;G11C16/34 |
主分类号 |
G11C16/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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