IMAGE SENSOR AND FABRICATION METHOD THEREOF

摘要

An image sensor and a method for manufacturing the same are provided to prevent the delamination effect of an LTO(Low Temperature Oxide) layer caused by a stress difference between layers. A lower structure(11) including a photodiode and a wiring is formed. A protective layer is formed on the lower structure. A color filter array(21) is formed on the protective layer. A micro-lens array(23) is formed on the color filter array. An LTO layer(25) is formed on the micro-lens array. A pad part(13) formed on the lower structure is exposed by etching the LTO layer and the protective layer. A process for forming the protective layer includes a process for forming an oxide layer(15) on the lower structure, a process for forming a nitride layer on the oxide layer, a process for performing an H2-annealing operation, and a process for exposing the oxide layer by removing the nitride layer.