| 摘要 |
A method of manufacturing a flash memory device includes etching portions of a tunnel oxide layer, a first polysilicon layer, a hard mask layer and a semiconductor substrate all of which are laminated over a semiconductor substrate to form trenches. The trenches are filled with an insulating layer thereby forming isolation layers. A portion of top surfaces of the isolation layers is removed, thereby controlling an effective field height (EFH) of the isolation layers while partially exposing sides of the first polysilicon layer. An oxide layer for spacers is formed on the surface of each isolation layer including the exposed first polysilicon layer by using DCS as a source gas. An etch process is performed so that the oxide layer remains only on the sides of the first polysilicon layer, thereby forming spacers. The isolation layers between the spacers are etched to a thickness. The spacers are removed. A dielectric layer and a second polysilicon layer are formed on the surface of each isolation layer.
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