| 摘要 |
A method for protecting an alignment mark on a semiconductor substrate, includes forming a dielectric layer on the semiconductor substrate having the alignment mark, forming a cap oxide film on the dielectric layer, wherein the cap oxide film is formed to have a regular thickness and an additional thickness, etching a portion of the dielectric layer and the cap oxide film to expose the semiconductor substrate to thereby form a via hole, filling the via hole with a metal, and performing a chemical mechanical polishing process with the metal and the cap oxide film to form a via contact.
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