| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, since a source region and a back gate region come into contact with a common source electrode in a conventional structure and each potential of the source region and the back gate region cannot be controlled, in the case where such MOSFET is used as a bidirectional switching element, two MOSFETs are connected in series, and a turn-on/off of the MOSFET and a parasitic diode are controlled by a control circuit, thereby preventing a downsizing of a device. SOLUTION: A source region is formed on the overall face of an operating region, a first back gate region is formed below the source region between trenches, and a second back gate region is formed to connect with the first back gate region outside of the source region. A first electrode layer coming into contact with the source region is formed on the overall face of the operating region, and a second electrode layer coming into contact with the second back gate region is formed in an outer periphery of the first electrode layer. Each potential can be applied to the first electrode layer and the second electrode layer to control to prevent a back flow caused by the parasitic diode. COPYRIGHT: (C)2008,JPO&INPIT
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