发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device with a fuse. SOLUTION: The semiconductor device is composed of an electric-fusion relief fuse 4a and a testing fuse 4b provided on a layer M4 of layers M1-M6 forming a multilayer wiring on a main surface of a semiconductor substrate 11, a pair of conductor plates 10a provided on the layers M2, M6 near the fuse 4a, and a pair of conductor plates 10b provided on the layers M3, M5 near the fuse 4b. The distance between the fuse 4b and the plate 10b is shorter than that between the fuse 4a and the plate 10a. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008053323(A) 申请公布日期 2008.03.06
申请号 JP20060225944 申请日期 2006.08.23
申请人 RENESAS TECHNOLOGY CORP 发明人 UCHIDA TAKAHIRO;OBAYASHI SHIGEKI;YONEZU TOSHIAKI;IWAMOTO TAKESHI;KONO KAZUFUMI;ARAKAWA MASASHI
分类号 H01L21/82;H01L21/3205;H01L21/822;H01L23/52;H01L27/04 主分类号 H01L21/82
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