摘要 |
Exemplary embodiments of the invention provide a method for producing a low-resistivity silicon single crystal in which a silicon wafer having a crystal axis orientation [110] can be obtained and dislocations are sufficiently eliminated, and a method for producing a low-resistance silicon wafer having the crystal axis orientation [110] from the silicon single crystal obtained by the low-resistivity silicon single crystal production method. In the silicon single crystal production method of the invention which employs a Czochralski method, the silicon single crystal whose center axis is inclined by 0.6° to 100 relative to a-crystal axis [110] is grown by dipping a silicon seed crystal in a silicon melt. Boron as a dopant is added in the silicon melt so that a boron concentration ranges from 6.25x10<SUP>17 </SUP>to 2.5x10<SUP>20 </SUP>atoms/cm<SUP>3</SUP>, a center axis of the silicon seed crystal is inclined by 0.6° to 10° relative to the crystal axis [110], and the silicon seed crystal has the substantially same boron concentration as that of a neck portion formed in the single crystal grown from the silicon melt.
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