发明名称 Tantalum lanthanide oxynitride films
摘要 Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a tantalum lanthanide oxynitride film.
申请公布号 US2008054330(A1) 申请公布日期 2008.03.06
申请号 US20060514545 申请日期 2006.08.31
申请人 MICRON TECHNOLOGY, INC. 发明人 FORBES LEONARD;AHN KIE Y.;BHATTACHARYYA ARUP
分类号 H01L23/58;H01L21/471 主分类号 H01L23/58
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