| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can stably form a silicide film of low resistance. SOLUTION: In a state that a silicide forming area is exposed to the surface of a silicon substrate 11, a metal film 17 is formed on the substrate 11 at first. Then, silicon contained in the silicide forming area is made to react with the metal film 17 by applying heat treatment under pressure higher than atmospheric pressure to the substrate 11 on which the metal film 17 is formed to form silicide films 18a, 18b. After removing the metal film which is no reaction in the heat treatment, a crystal phase is transferred by heat treatment to perform the resistance reducing processing of the silicide films 18a, 18b. COPYRIGHT: (C)2008,JPO&INPIT
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