| 摘要 |
An embodiment of a method for manufacturing an integrated circuit formed on a semiconductor substrate comprising the steps of: forming at least one shielding structure on said semiconductor substrate, forming a protective layer at least on portions of the semiconductor substrate that surround said shielding structure, carrying out a ionic implantation step with a tilt angle with respect to a normal to a plane defined by said semiconductor substrate so that said at least one shielding structure shields first portions of the protective layer, removing second portions of the protective layer that have been subjected to the ionic implant.
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