| 摘要 |
<p>A semiconductor device is provided to embody low-voltage driving and miniaturization by accomplishing a voltage shift of a high critical value and a long interval of retention time while restraining a difference of characteristics between semiconductor memory devices. A channel region(105) is formed on a semiconductor substrate(100). A tunnel insulation layer(120) is formed on the channel region. A charge accumulation insulation layer(122) is formed on the tunnel insulation layer. A control insulation layer(124) is formed on the charge accumulation insulation layer. A control electrode(130) is formed on the control insulation layer. A source region and a drain region are formed at both sides of the channel region. The width(W) and height(H) of a section of the channel region vertical to a channel length direction are 10 nm, respectively. The semiconductor substrate can have a filling insulation layer. The channel region can be made of silicon.</p> |
