发明名称 PLANAR LAYER OF IMAGE SENSOR, METHOD FOR MANUFACTURING PLANER LAYER, AND IMAGE SENSOR INCLUDING PLANAR LAYER
摘要 An image sensor formed using a method for manufacturing a planar layer in a process for forming microlenses may be used in a complementary metal oxide semiconductor (CMOS) image sensor. Embodiments provide a planar layer that can improve the operation performance of an image sensor, a manufacturing method thereof, and the image sensor including the planar layer. Embodiments relate to a planar layer located under microlenses, the planar layer including valleys of patterns having a predetermined size, which may eliminate optical cross talk between adjacent pixels.
申请公布号 US2008054389(A1) 申请公布日期 2008.03.06
申请号 US20070847605 申请日期 2007.08.30
申请人 YUN YOUNG-JE 发明人 YUN YOUNG-JE
分类号 H01L31/0232;H01L21/02 主分类号 H01L31/0232
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