发明名称 |
Method of forming a thin film and methods of manufacturing a gate structure and a capacitor using same |
摘要 |
A method of manufacturing a thin film includes providing a metal organic precursor onto a substrate where the metal organic precursor is heated to a temperature of about 60° C. to about 95° C. and has a saturated vapor pressure of about 1 Torr to about 5 Torr. An oxidizing agent including oxygen for oxidizing the metal organic precursor is provided onto the substrate. The metal organic precursor and the oxidizing agent are chemically reacted to form the thin film including metal oxide. The thin film is easily available in a gate insulation layer of a gate structure, a dielectric layer of a capacitor, and similar circuit components.
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申请公布号 |
US2008057224(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
US20070790445 |
申请日期 |
2007.04.25 |
申请人 |
CHO YOUN-JOUNG;LEE JUNG-HO;CHO JUN-HYUN;RYU SEUNG-MIN;CHO KYOO-CHUL;CHOI JUNG-SIK |
发明人 |
CHO YOUN-JOUNG;LEE JUNG-HO;CHO JUN-HYUN;RYU SEUNG-MIN;CHO KYOO-CHUL;CHOI JUNG-SIK |
分类号 |
C23C8/00 |
主分类号 |
C23C8/00 |
代理机构 |
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代理人 |
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