| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting diode element which is intended to improve a light extraction efficiency in the nitride semiconductor light emitting diode device having stripe-shaped trenches on a surface of a substrate, and is suited to a light source for a luminaire at a high luminous efficiency. <P>SOLUTION: In the nitride semiconductor light emitting diode element 10, a plurality of stripe-shaped trenches T10 are arranged in parallel to each other and formed on a crystal growing face of a sapphire substrate 11, a nitride semiconductor layer N is formed thereon so as to bury the trenches T10, and the nitride semiconductor layer N contains a pn junction which emits a light. The nitride semiconductor layer N has a higher refractive index than the sapphire substrate 11, and at least a part of the stripe-shaped trenches T10 is a trench having an end terminated at a wall face E. <P>COPYRIGHT: (C)2008,JPO&INPIT |
