| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device and a method of manufacturing the same capable of reading and writing data only by a switching operation of a plurality of flip electrodes formed symmetrically about a trench. SOLUTION: A memory device has a bit line 20, a plurality of word lines 30 and 40, and a flip electrode 50. The bit line 20 is formed in one direction. The word lines 30 and 40 are insulated from the bit line 20 and cross with the bit line 20 at one side of the bit line 20, and are formed to be parallel to each other with a predetermined gap. The flip electrode 50 has one side coupled with the bit line 20, and the other side inserted into the gap between the word lines 30 and 40 with taking a long path of the word lines 30 and 40 adjacent to the bit line 20. The other side of the flip electrode 50 is bent in any one direction to the word lines 30 and 40 by an electric field inducted between the word lines 30 and 40. COPYRIGHT: (C)2008,JPO&INPIT |
