摘要 |
PROBLEM TO BE SOLVED: To provide a CCD solid-state imaging element that has a horizontal type overflow drain structure to prevent superposing of noise on information charges when transfer driving by AGP drive. SOLUTION: The solid-state imaging element comprises a plurality of first channel regions 4 provided parallel to each other, overflow drain regions 14 provided between adjoining first channel regions 4, a plurality of separation regions 12 provided between the first channel region 4 and the overflow drain region 14, and a plurality of first transfer electrodes 10 provided, parallel to each other, in the direction across the first channel region 4, in the plurality of first channel regions. A second channel region 8 which is higher in concentration than the first channel region 4, being close to the region where the first channel region 4 crosses the specified transfer electrode 10, is provided. The overflow drain region 14 that adjoins the second channel region 8 comprises a protruding part 18 extending toward the second channel region 8. COPYRIGHT: (C)2008,JPO&INPIT
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