| 摘要 |
PROBLEM TO BE SOLVED: To form the oxide of a semiconductor material at a lower temperature and more surely in comparison with a thermally oxidizing method, by contacting the semiconductor material with a water of its temperature and pressure falling within a specific scope. SOLUTION: The oxide forming method includes a process for contacting a semiconductor material 17 with a high-temperature and high-pressure water not less than 200°C in its temperature and not less than 1.5 MPa in its pressure by using an oxidizing processor 100, and for forming the oxide of this semiconductor material. Hereupon, the semiconductor material belongs to a group III-V compound semiconductors. COPYRIGHT: (C)2008,JPO&INPIT
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