发明名称 |
Semiconductor device with reliable high-voltage gate oxide and method of manufacture thereof |
摘要 |
A semiconductor device including a capacitor and a proximate high-voltage gate having a boron-barrier layer that ideally serves as part of both the capacitor dielectric and the (high voltage) HV gate oxide. The boron-barrier layer is preferably formed over a poly oxide layer that is in turn deposited on a substrate infused to create a neighboring wells, and N-well over which the capacitor will be formed, and P-well to be overlaid by the HV gate. The boron-barrier helps to reduce or eliminate the harmful effects of boron diffusion from the P-well during TEOS deposition of the gate oxide material.
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申请公布号 |
US2008054399(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
US20060515961 |
申请日期 |
2006.09.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG CHYI-CHYUAN;LIN SHYH-AN;HSU CHEN-FU |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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