| 摘要 |
An apparatus for atomic layer deposition (ALD) and methods for manufacturing a semiconductor device using the same. In one example embodiment, an ALD apparatus includes a heater, a plasma device, a distance control unit, and a controller. The heater is configured to have a semiconductor substrate mounted thereon. The plasma device is positioned opposite an upper side of the heater. The distance control unit is configured to control a distance between the plasma device and the semiconductor substrate. The controller is configured to determine whether the semiconductor substrate has been plasma-damaged by the plasma device.
|
