| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a power device which includes a deep diffusion layer of a high surface concentration having such a shape of a diffusion region as to have a large curvature radius as a whole, capable of exhibiting a high breakdown voltage and a low loss while suppressing roughness on the surface of the diffusion layer. SOLUTION: The method of manufacturing a semiconductor device includes steps of forming a first mask pattern 20 on a substrate 2 having at least a surface layer formed as a single crystalline SiC layer 11, forming a first opening 21 in the first mask pattern 20, and ion-implanting a first impurity into the single crystalline SiC layer 11 via the first opening 21. The method further includes steps of forming a second opening 24 including the first opening 21 of the first mask pattern 20 and having an opening shape larger than the first opening 21, ion-implanting a second impurity of the same conductivity as the first impurity into the single crystalline SiC layer 11 via the second opening 24, and thermally processing a substrate 2 to diffuse the first and second impurities at the same time. COPYRIGHT: (C)2008,JPO&INPIT |
