| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method in which bottoms of a groove (trench) and a hole (hole) are made to reach an etching stopper film substantially at the same time during etching. SOLUTION: In the etching method, a workpiece S is mounted on a placement table 16 in a processing container 12; and, while etching gas is supplied, high-frequency electric power of predetermined frequency is applied as bias electric power to the placement table in the presence of plasma to etch a target film to be etched, which is formed on a surface of the workpiece and has a smaller dielectric constant than an SiO<SB>2</SB>film. The method includes a first stage of carrying out etching by applying high-frequency electric power of first frequency as bias electric power, and a second stage of carrying out etching by applying high-frequency electric power of second frequency different from the first frequency as bias electric power. COPYRIGHT: (C)2008,JPO&INPIT
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