| 摘要 |
PROBLEM TO BE SOLVED: To reduce leakage current of buried semiconductor laser and improve current light output characteristics. SOLUTION: The buried semiconductor laser 1 is formed of a p-type InP substrate 2 and has a ridge 6 consisting of a first clad layer 3 made of p-type InP, an AlGaInAs distortion quantum well active layer 4 and a second clad layer 5 made of n-type InP which are laminated. A buried current block layer 10 in which a first buried layer 7 made of p-type InP, a second buried layer 8 made of n-type InP and a third buried layer 9 made of semi-insulated Fe-doped InP are sequentially laminated is formed on both sides of the ridge 6. The upper surface of the third buried layer 9 is covered with a semiconductor layer 11 made of n-type InP. This structure can prevent a leakage current path from occurring on the upper surface of the third buried layer 9 and improve the reliability of the buried semiconductor laser. COPYRIGHT: (C)2008,JPO&INPIT
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