| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor optical device which is capable of preventing an intermediate semiconductor layer containing aluminum from forming an aluminum compound in an atmosphere containing oxygen, and making the top plane of a stripe and the width of the intermediate layer compatible with each other in a practical range. SOLUTION: The method of manufacturing the semiconductor optical device comprises a first process of forming a first stripe side wall at the end of an upper semiconductor layer within a range in which it does not reach to the intermediate semiconductor layer that contains aluminum; a second process of forming a second stripe side wall at the end of the intermediate semiconductor layer and the ends of the adjacent parts of an upper semiconductor layer and a lower semiconductor layer adjacent to the intermediate layer, by the use of gas containing halogen in a crystal growth device after the first stripe side wall has been formed; and a third process of forming a buried semiconductor layer with a protective buried part joined to the ends of the intermediate semiconductor layer and the adjacent parts, on the second stripe side wall in the crystal growth device successively after the second stripe side wall is formed. COPYRIGHT: (C)2008,JPO&INPIT
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