| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film element by which a thin-film element is manufactured through two-time vapor deposition, and a gap can be provided in the opening of a mask layer instead immediately under the mask. SOLUTION: This method is used to manufacture a thin-film element having a semiconductor or semi-metal thin film by using a mask layer with an opening, and it includes a first vapor deposition step wherein an electrode material is deposited on a substrate by means of the opening, from a first direction of angle to an axis vertical to the face of the mask layer; and a second vapor deposition step wherein a thin-film material is deposited through the opening from a second direction of angle, in a two-dimensional plane formed by the axis and the first direction of angle. COPYRIGHT: (C)2008,JPO&INPIT
|
