| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for doping a multi-gate device. SOLUTION: The doping method includes a process for patterning a fin in a substrate, a step for depositing a gate stack, and a process for doping the fin. The step for doping the fin is carried out by depositing a blocking mask material at least on the top surface of the fin after patterning the gate stack. After the process for depositing the blocking material, dopant ions are implanted, whereby the blocking mask material partially or completely blocks the top surface of the fin from these dopant ions. COPYRIGHT: (C)2008,JPO&INPIT
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