Semiconductor Device and Fabricating Method Thereof

摘要

A semiconductor device according to an embodiment includes a first metal wiring formed on a semiconductor substrate; a first dielectric barrier layer formed on the first metal wiring; an inter-layer dielectric (ILD) layer formed on the first dielectric barrier layer; a plurality of second metal wirings formed on the ILD layer; and at least one hole formed in the ILD layer in regions between second metal wirings.