发明名称 |
Semiconductor device and methods of forming the same |
摘要 |
An example embodiment provides a method of forming a conductive pattern in a semiconductor device. The method includes forming one or more dielectric layers over a first conductive pattern formed on a substrate; forming an opening in the one or more dielectric layers to expose a portion of the first conductive pattern, forming a growth promoting layer over the exposed portion of the first conductive pattern and the one or more dielectric layers, forming a growth inhibiting layer over a portion of the growth promoting layer, and forming the second conductive layer in the opening.
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申请公布号 |
US2008054468(A1) |
申请公布日期 |
2008.03.06 |
申请号 |
US20070892089 |
申请日期 |
2007.08.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI KYUNG-IN;CHOI GIL-HEYUN;LEE SANG-WOO;LEE JONG-MYEONG;HONG JONG-WON;LEE HYUN-BAE |
分类号 |
H01L23/52;H01L21/4763 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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