发明名称 Test method for semiconductor memory device and semiconductor memory device therefor
摘要 The present invention detects a sense amplifier having an unbalanced characteristic. In a test method for a semiconductor memory device for detecting a sense amplifier having an unbalanced characteristic, an intermediate potential having different H and L levels from normal operation is restored in a first memory cell of a first bit line connected to a test target sense amplifier, charge quantity when the capacitance of the capacitor is small is virtually stored in the first memory cell, then the data of the first memory cell is read, and a malfunction of the sense amplifier is checked based on the presence of an error of read data.
申请公布号 US2008056032(A1) 申请公布日期 2008.03.06
申请号 US20070892358 申请日期 2007.08.22
申请人 FUJITSU LIMITED 发明人 TOMITA HIROYOSHI
分类号 G11C29/00 主分类号 G11C29/00
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