| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which a burst length can be set to smaller than the number of pre-fetches while suppressing an increase in a circuit scale. SOLUTION: The semiconductor storage device is equipped with: a FIFO circuit group 123 connected to a data input/output terminal DQ; time division transfer circuits 107A, 107B for input/output n-bit data in parallel, which are continuously input or output through the data input/output terminal DQ; a data bus RWBS for transferring the data between the time division transfer circuits 107A, 107B and the FIFO circuit group 123; and a mode register 122 for setting the burst length. The time division transfer circuits 107A, 107B performs data transfer using the data bus at a m-bit unit independently of the burst length, wherein m denotes a minimum burst length capable of being set to the mode register 122. Thus, the burst length can be set to smaller than the number of pre-fetches without performing a burst chop. COPYRIGHT: (C)2008,JPO&INPIT
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