| 摘要 |
A junction field effect transistor of the present invention includes: a first conductivity type semiconductor substrate; a second conductivity type epitaxial layer formed on the semiconductor substrate; a first conductivity type epitaxial layer formed on the second conductivity type epitaxial layer; a second conductivity type source region which penetrates the first conductivity type epitaxial layer in a layer thickness direction thereof and is connected to the second conductivity type epitaxial layer; a second conductivity type drain region which is spaced from the source region, penetrates the first conductivity type epitaxial layer in the layer thickness direction, and is connected to the second conductivity type epitaxial layer; a source electrode connected to the source region; a drain electrode connected to the drain region; and a gate electrode electrically connected to the first conductivity type epitaxial layer between the source region and the drain region.
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