发明名称 |
MINUTE PATTERN REVISION METHOD |
摘要 |
<p>A method for revising a defect of minute pattern is provided to promptly and accurately correct the defect of minute pattern and to prevent the extension of a defect region by using a mask having a laser passing hole. A mask(50) having a laser passing hole(51) is arranged over minute patterns(30,30'). The laser passing hole is opened so as to be corresponded to minute pattern forming regions(21,21'). A laser is irradiated to the laser passing hole corresponding to a defect minute pattern to remove it. A normal minute pattern is formed on the minute pattern forming region from which the defect minute pattern is removed by filling a minute pattern material into the minute pattern forming regions and hardening the minute pattern material filled in the minute pattern forming regions. The minute patterns are formed in a certain linear arrangement structure along a plane surface of a substrate.</p> |
申请公布号 |
KR100810043(B1) |
申请公布日期 |
2008.03.05 |
申请号 |
KR20070013858 |
申请日期 |
2007.02.09 |
申请人 |
KOREA INSTITUTE OF MACHINERY & MATERIALS |
发明人 |
LEE, TAIK MIN;SHIN, DONG YOUN;KIM, CHUNG HWAN;JO, JEONG DAI;KIM, DONG SOO;CHOI, BYUNG OH |
分类号 |
H01L21/027;H01L21/00;H01L21/66 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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