| 摘要 |
A method for washing a wafer is provided to enhance the efficiency of removing dopants on the wafer by instantaneously separating the dopants from a wafer using a single type washing apparatus. A semiconductor substrate(W) is mounted on a wafer chuck(13) in a chamber of a single type washing apparatus. By spraying a chemical(16) on the semiconductor substrate mounted in the chamber, dopants on the semiconductor substrate are removed. By spraying pure and IPA(Isopropyl Alcohol) vapors on the substrate, the resultant substrate is then dried. When the resultant substrate is dried, position variation is abruptly applied to the wafer in upper and lower directions so as to instantaneously separate the chemical and the pure and IPA vapors from a surface of the wafer.
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