SEMICONDUCTEUR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention is a semiconductor device including a gate electrode (31) provided on a semiconductor substrate (10), an oxide/nitride/oxide (ONO) film (18) that is formed between the gate electrode and the semiconductor substrate and has a charge storage region under the gate electrode; and a bit line (28) that is buried in the semiconductor substrate and includes a low concentration diffusion region (24), a high concentration diffusion region (22) that is formed in the center of the low concentration diffusion region and has a higher impurity concentration than the low concentration region, a source region, and a drain region. A semiconductor device that can improve the source-drain breakdown voltage of the transistor, and suppress fluctuation of electrical characteristics or suppress junction current between the bit line and the semiconductor substrate can be provided.