| 摘要 |
A method for manufacturing a semiconductor device based on a 90 nm design rule is provided to prevent the increase of a leakage current by removing irregular roughness formed at an inner wall of an insulating layer using a roughness removing process. Irregular roughness is formed at an inner wall of an insulating layer. By executing a roughness removing process, the irregular roughness formed at an inner wall of an insulating layer is removed. After the irregular roughness formed at an inner wall of an insulating layer is removed, an STI(Shallow Trench Isolation)(208) is formed on a silicon substrate(200a) through an STI process. The insulating layer includes a first silicon nitride layer(202a), a silicon oxidation layer(204a), and a second nitride layer(206a).
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