发明名称 |
Nonvolatile semiconductor memory device with memory cells, each having an FG cell transistor and select gate transistor, and a method of writing data into the same |
摘要 |
A semiconductor device comprises a memory cell array and a source line driver. Each of the memory cells in the memory cell array has a floating gate cell transistor which stores data by accumulating charge in the floating gate and a select gate transistor whose drain is connected to the source of the cell transistor and whose source is connected to a source line. The source line driver is configured so as to drive the source line in a write operation at a potential between the substrate bias potential of the cell transistor and select gate transistor and the ground potential.
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申请公布号 |
US7339828(B2) |
申请公布日期 |
2008.03.04 |
申请号 |
US20050248303 |
申请日期 |
2005.10.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HASEGAWA TAKEHIRO;SHUTO SUSUMU |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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