SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

摘要

A high-performance high-reliability semiconductor device having a silicon nitride film (17) for self- alignment which is so formed as to cover the gate electrode of a MISFET by a plasma CVD method in which the wafer temperature is 400‹C or more, and the material gases are monosilane and nitrogen. A silicon nitride film (44) constituting a passivation film is formed by a plasma CVD method in which the wafer temperature is around 350‹C, and the material gases are monosilane, ammonia, and nitrogen. The quantity of hydrogen contained in the silicon nitride film (17) is less than that contained in the silicon nitride film (44), and the amount of hydrogen liberated from the silicon nitride film (17) is little. ® KIPO & WIPO 2008